–17 PhD students at present

–2 Master’s students & 4 Research Assistants, 5 Post Doctoral Fellows

–Expertise: Mix of Device Processing, Device / Material Characterization, Computation, modeling and theory

–Strength: 30+

Facilities

Within the Group

  • ESD Characterization setup (TLP and vf-TLP)
  • Setup for nano-material transfer/deposition
  • Nano-second pulse characterization setup
  • Stamping stage with high resolution microscope and nano positioners for 2D material transfer and stacking
  • An integrated EL/PL/Raman system with low temperature (Liquid He) sample mounting/probing stage
  • Setup for 1/f noise characterization
  • High end computational clusters with total 96 cores & ~2 TB RAM
  • Fully automated low temperature probe station
  • Automated reliability characterization setup (with 20+ SMUs and dedicated probe station)

Central Facilities

  • Wafer level ultra high power measurement setup
  • Wafer level – automated – low current (down to fA) / low power device characterization setup
  • Setup for thermal conductivity and diffusivity characterization of 2D materials and thin films
  • L-He CCR based measurement setup
  • 67GHz VNA
  • DLTS
  • PCT with 24 Ch. Sw Matrix
  • Glove-Box based setup for 2D device fabrication
  • HBM
  • High Resolution 12 GHz DSO (for Vf-TLP)
  • TIM, SEM & SThM