–17 PhD students at present
–2 Master’s students & 4 Research Assistants, 5 Post Doctoral Fellows
–Expertise: Mix of Device Processing, Device / Material Characterization, Computation, modeling and theory
–Strength: 30+
Facilities
Within the Group
- ESD Characterization setup (TLP and vf-TLP)
- Setup for nano-material transfer/deposition
- Nano-second pulse characterization setup
- Stamping stage with high resolution microscope and nano positioners for 2D material transfer and stacking
- An integrated EL/PL/Raman system with low temperature (Liquid He) sample mounting/probing stage
- Setup for 1/f noise characterization
- High end computational clusters with total 96 cores & ~2 TB RAM
- Fully automated low temperature probe station
- Automated reliability characterization setup (with 20+ SMUs and dedicated probe station)
Central Facilities
- Wafer level ultra high power measurement setup
- Wafer level – automated – low current (down to fA) / low power device characterization setup
- Setup for thermal conductivity and diffusivity characterization of 2D materials and thin films
- L-He CCR based measurement setup
- 67GHz VNA
- DLTS
- PCT with 24 Ch. Sw Matrix
- Glove-Box based setup for 2D device fabrication
- HBM
- High Resolution 12 GHz DSO (for Vf-TLP)
- TIM, SEM & SThM